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| Advance Product Information October 30, 2003 Ku Band 2 Watt Packaged Amplifier * * * * * * * * * TGA2510-EPU-SG 33.5 dBm Midband Psat 25 dB Nominal Gain 7 dB Typical Input Return Loss 10 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25m pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Package Dimensions: 9.4 x 6.4 x 1.8 mm (0.370 x 0.250 x 0.071 inches) Key Features and Performance Preliminary Measured Performance Bias Conditions: Vd=7.5V Id=650mA 30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 10 S21 S11 5 S22 0 -5 -10 -15 -20 Primary Applications S11,S22 (dB) S21 (dB) * * VSAT Point to Point Frequency (GHz) 36 Pout @ Pin=+14dBm (dBm) 35 34 33 32 31 30 29 28 27 26 11 12 13 14 15 16 17 18 19 Pout PAE 60 50 45 40 35 30 25 20 15 10 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com PAE @ Pin=+14dBm (%) 55 Advance Product Information October 30, 2003 TGA2510-EPU-SG TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.15 W 150 C 320 C -65 to 150 C 0 0 0 Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C When operated at this bias condition with a baseplate temperature of 70C, the MTTF is reduced to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II THERMAL INFORMATION Parameter RQJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 7.5V ID = 650mA PDISS = 4.88W TBASE = 70C TCH (C) 132.3 RQJC (C/W) 12.8 MTTF (hrs) 4.8E+6 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 7.5V, Id = 650mA 5%) Symbol Parameter Test Conditions TGA2510-EPU-SG Typ Units Notes Gain Small Signal Gain F = 12.5 - 16 GHz 25 dB IRL Input Return Loss F = 12.5 - 16 GHz 7 dB ORL Output Return Loss Output Power @ Pin = +14dBm Power Added Efficiency @ Pin = +14dBm F = 12.5 - 16 GHz 10 dB PWR F = 12.5 - 16 GHz 33.5 dBm PAE F = 12.5 - 16 GHz 29 % Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 30 25 20 Typical Fixtured Performance TGA2510-EPU-SG Id=650mA Vd=5V Vd=7.5V S21 (dB) 15 10 5 0 10 0 -2 -4 -6 Vd=5V Vd=7.5V 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) S11 (dB) -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 0 -2 -4 -6 Typical Fixtured Performance TGA2510-EPU-SG Id=650mA Vd=5V Vd=7.5V S22 (dB) -8 -10 -12 -14 -16 -18 -20 10 0 -10 -20 Vd=5V Vd=7.5V 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) S12 (dB) -30 -40 -50 -60 -70 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Typical Fixtured Performance Id=650mA 37 36 Pout @ Pin=+14dBm (dBm) 65 Pout Vd=7.5V PAE Vd=7.5V Pout Vd=5V PAE Vd=5V 60 55 50 45 40 35 30 25 20 15 10 11 12 13 14 15 16 17 18 19 35 34 33 32 31 30 29 28 27 26 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com PAE @ Pin=+14dBm (%) Advance Product Information October 30, 2003 40 39 38 37 36 35 34 33 32 31 30 12 18 12 6 Typical Fixtured Performance TGA2510-EPU-SG Id=800mA Average TOI (dBm) 13 14 15 16 17 18 Frequency (GHz) 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz IMD3 (dBm) 0 -6 -12 -18 -24 -30 16 18 20 22 24 26 28 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 Output Power/Tone (dBm) TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Package Pinout Diagram VREF RF IN VD RF OUT VG VDET Package Assembly Diagram VD 10W 1mF RF IN RF OUT 10W VG 1mF GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Mechanical Drawing Dimensions in inches 0.012 typ CL 0.160 typ 0.250 sq Top View 0.010 0.060, 6 pl R=0.010 2 pl 0.020 ref (2) 0.006 0.060 typ Side View 0.030 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Recommended PWB Land Pattern Dimensions in inches GND / Thermal Vias Vd RF out 0.119 0.090 0.070 0.006 0.000 - 0.006 - 0.070 - 0.090 - 0.119 Vg RF in - 0.119 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com - 0.195 - 0.145 0.119 0.000 0.145 0.195 Advance Product Information October 30, 2003 TGA2510-EPU-SG Power Detector +5V 40KW 40KW External Vref Vdet Package 5pF 50W DUT RF out 0.6 0.5 TGA2510 Power Detector @ 14GHz Vref-Vdet (V) 0.4 0.3 0.2 0.1 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Pout (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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